Radical new computer memory? emergent resistance network suggests mechanism for colossal magnetoresistance
Geplaatst op 27 juli 2010 - 17:06
ScienceDaily (July 27, 2010) — Research by scientists at Stanford University and RIKEN has revealed new clues on the microscopic processes by which resistance in certain materials is dramatically altered by the presence of magnetic fields. Reported in Science, the discovery provides fundamental insights toward the development of radically new memory and switching devices
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